| PART |
Description |
Maker |
| TE28F010-120 TE28F010-150 TE28F010-90 TP28F010-120 |
28F010 1024K (128K X 8) CMOS FLASH MEMORY
|
INTEL[Intel Corporation]
|
| EN29LV160JB70S EN29LV160JB70SI EN29LV160JB70SIP EN |
Replaced by PTN78000W : 16兆位048K × 8 1024K x 16位）闪存引导扇区闪存，CMOS 3.0伏，
Replaced by PTN78000W : 8VOUT 1A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Electronic Theatre Controls, Inc.
http://
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| AS29F010 AS29F010-120LC AS29F010-120TC AS29F010-15 |
5V 128K x 8 CMOS FLASH EEPROM 128K X 8 FLASH 5V PROM, 120 ns, PDIP32
5V 128K x 8 CMOS FLASH EEPROM 128K X 8 FLASH 5V PROM, 120 ns, PQCC32
5V 128K x 8 CMOS FLASH EEPROM 128K X 8 FLASH 5V PROM, 150 ns, PQCC32
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| W29EE011P-90 W29EE011P-15 W29EE011T-15 |
Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:Black; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
KJA SERIES III
128K X 8 CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
128K X 8 CMOS FLASH MEMORY 128K的8的CMOS闪存
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| MX26C1000BTC-10 MX26C1000BMC-10 MX26C1000BPC-10 MX |
Toggle Switch; Circuitry:DPDT; Switch Operation:On-Off-On; Contact Current Max:12A; Leaded Process Compatible:Yes
Toggle Switch; Circuitry:SPDT; Switch Operation:On-On; Contact Current Max:12A; Leaded Process Compatible:Yes 128K X 8 FLASH 12V PROM, 150 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CA |
1 Megabit CMOS Flash Memory
128K X 8 FLASH 12V PROM, 90 ns, PDSO32
Bulk Erase Flash Memory, 1Mb
128K X 8 FLASH 12V PROM, 90 ns, PDIP32
|
http://
CATALYST[Catalyst Semiconductor]
ON SEMICONDUCTOR
|
| EN29LV800BB-70BC EN29LV800BB-70BCP EN29LV800BB-70B |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
http://
Eon Silicon Solution Inc.
|
| EN29F800T90TI EN29F800 EN29F800B45S EN29F800B45SI |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only
|
ETC[ETC]
|
| EN29LV160CB-70BIP EN29LV160CB-70TIP EN29LV160CT-70 |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
|
| EN29LV800CB-70BIP EN29LV800CB-70BAP EN29LV800CB-70 |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
|
| EN29LV800T70RS EN29LV800T70RSI EN29LV800T70RSIP EN |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
ETC
|
